15C02SS中文资料
- 大小：31.68KB
- 厂家：SANYO[Sanyo Semicon Device]
- 描述：15C02SS No.7357-1/4 NPN Epitaxial Planar Silicon Transistor Applications ? Low-frequency amplifer, high-speed switching, small motor drive. Features ? Large current capacitance. ? Low collector-to-emitter saturation voltage (resistance). R CE (sat) typ=300mΩ[I C =1A, I B =50mA]. ? Ultrasmall package facilitates miniaturization in end products. ? Small ON-resistance (Ron). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 20 V Collector-to-Emitter Voltage V CEO 15 V Emitter-to-Base Voltage V EBO 5V Collector Current I C 0.8 A Collector Current (Pulse) I CP 1.6 A Collector Dissipation P C Mounted on a glass epoxy board (205 305 1.6mm) 200 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO V CB =12V, I E =0 100 nA Emitter Cutoff Current I EBO V EB =4V, I C =0 100 nA DC Cu
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更新时间:2022-12-31 13:02:32
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